| PART |
Description |
Maker |
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM5N141GW |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5W232LY |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷放电前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
| C4777-01 |
APD module APD module integrated with peripheral circuits
|
Hamamatsu Corporation
|
| C30659-900-R5B C30659-900-R8A C30659-1060-R8B |
Silicon and InGaAs APD Preamplifier Modules 铟镓砷硅和APD的前置放大器模块
|
PerkinElmer Inc.
PerkinElmer, Inc.
|
| G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
Hamamatsu Photonics K.K.
|
